HE Hongtao Associate Professor

Phone:0755-88018288

Email:heht#sustech.edu.cn

Research Areas

  • Quantum Transportation
  • Quantum Materials
  • Interface Physics

Educational Background

Ph.D., Department of Physics, Hong Kong University of Science and Technology, 2006;

B.S., Department of Physics, China University of Science and Technology, 2001.



Professional Experience

2011.08-Present, Associate Professor , Department of Physics, Southern University of Science and Technology
2011, Postdoctoral Fellow, Department of Physics, Hong Kong University of Science and Technology;
2010-2011, Research Associate, Department of Physics, Hong Kong University of Science and Technology;
2009-2010, Research Associate, Chinese University of Hong Kong;
2008-2009, Research Associate, Department of Physics, Hong Kong University of Science and Technology;
2006-2008, Research Assistant, Department of Physics, Hong Kong University of Science and Technology.



Selected Publication

1. “Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Te3 films”, H.T. He, H.C. Liu, B.K. Li, X. Guo, Z.J. Xu, M.H. Xie, and J.N. Wang, Appl. Phys. Lett. 103, 031606 (2013).

2. “Anisotropic topological surface states on high index Bi2Se3 films”, Z.J. Xu, X. Guo, M.Y. Yao, H.T. He, L. Miao, L. Jiao, H.C. Liu, J.N. Wang, D. Qian, J.F. Jia, W.K. Ho, and M.H. Xie, Adv. Mater. 25, 1557 (2013).

3. “High-field linear magneto-resistance in topological insulator Bi2Se3 thin films”, H.T. He, B.K. Li, H.C. Liu, X. Guo, Z.Y. Wang, M.H. Xie, and J.N. Wang, Appl. Phys. Lett. 100, 032105 (2012).

4. “Impurity effect on weak anti-localization in topological insulator Bi2Te3”, H. T. He, G. Wang, T. Zhang, I. K. Sou, George K. L. Wong, J. N. Wang, H. Z. Lu, S. Q. Shen, and F. C. Zhang, Phys. Rev. Lett. 106, 166805 (2011).

5. “Systematic study of anisotropic magnetoresistance effect in (311)A GaMnAs films”, H. T. He, X. C. Cao, T. Zhang, Y. Q. Wang, and J. N. Wang, 2010, J. Appl. Phys. 107, 063902 (2010).